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NTLUF4189NZ
MOSFET Electrical Characteristic s (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t d(ON)
7.0
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 15 V,
I D = 1A, R G = 6 W
4.5
10.2
1.2
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 1A
T J = 25 ° C
T J = 85 ° C
0.8
0.75
1.2
V
Reverse Recovery Time
t RR
10.5
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dI SD /dt = 100 A/ m s,
I S = 1 A
8.9
1.6
Reverse Recovery Charge
Q RR
2.1
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Maximum Instantaneous Forward
Voltage
Symbol
V F
Test Condition
I F = 10 mA
I F = 100 mA
Min
Typ
0.27
0.36
Max
0.37
0.46
Units
V
I F = 500 mA
0.52
0.62
Maximum Instantaneous
Reverse Current
I R
V R = 10 V
V R = 30 V
2.0
20
10
200
m A
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 85 ° C unless otherwise specified)
Maximum Instantaneous
Forward Voltage
V F
I F = 10 mA
I F = 100 mA
0.2
0.3
V
I F = 500 mA
0.51
Maximum Instantaneous
Reverse Current
I R
V R = 10 V
V R = 30 V
80
525
m A
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 125 ° C unless otherwise specified)
Maximum Instantaneous
Forward Voltage
V F
I F = 10 mA
I F = 100 mA
0.14
0.27
V
I F = 500 mA
0.51
Maximum Instantaneous
Reverse Current
I R
V R = 10 V
V R = 30 V
600
3000
m A
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Capacitance
C
V R = 5 V, f = 1.0 MHz
6.0
pF
3.
4.
5.
6.
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. Cu.
Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%
Switching characteristics are independent of operating junction temperatures
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